2019 International Conference on Solid State Devices and Materials

Presentation information

Oral Presentation

11: Advanced Materials Synthesis, Crystal Growth and Characterization

[F-2] GaN-Related Technologies

Tue. Sep 3, 2019 3:45 PM - 5:30 PM ES033 (ES 3F)

Session Chair: A. Kikuchi (Sophia Univ.), T. Hoshi (NTT Device Tech. Labs.)

3:45 PM - 4:15 PM

[F-2-01 (Invited)] Investigation of doping in III-nitrides by combining atom probe tomography and EDX spectroscopy

C. Bougerol1, L. Amichi2, A. Dussaigne3, A. Grenier3, P.H. Jouneau2, E. Monroy2, E. Robin2 (1.CNRS Inst. Neel (France), 2.CEA INAC (France), 3.CEA LETI (France))

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