3x Improved Set-voltage Variability of Cu Atom Switch with Split-electrode for Very Large Scale Integration

N. Banno

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Oral Presentation

02: Advanced / Emerging Memories and New Applications

[H-1] ReRAM

Tue. Sep 3, 2019 2:00 PM - 3:30 PM IB011 (IB 1F)

Session Chair: K. Kinoshita (Tokyo Univ. of Science), A. Himeno (Panasonic Corp.)

2:30 PM - 2:45 PM

[H-1-02] 3x Improved Set-voltage Variability of Cu Atom Switch with Split-electrode for Very Large Scale Integration

^○N. Banno¹, K. Okamoto¹, H. Numata¹, N. Iguchi¹, M. Miyamura¹, R. Nebashi¹, X. Bai¹, H. Hada¹, T. Sugibayashi¹, T. Sakamoto¹, M. Tada¹ (1.NEC Corp. (Japan))

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Presentation information

[H-1] ReRAM

[H-1-02] 3x Improved Set-voltage Variability of Cu Atom Switch with Split-electrode for Very Large Scale Integration

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