High Reliability CoFeB/MgO/CoFeB Magnetic Tunnel Junction FabricationUsing Low-damage Ion Beam Etching

H. Park

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Oral Presentation

02: Advanced / Emerging Memories and New Applications

[H-7] MRAM, PCRAM and Emerging Memories

Thu. Sep 5, 2019 1:00 PM - 2:30 PM IB011 (IB 1F)

Session Chair: H. Sato (Tohoku Univ.), M. H Lee (Macronix International Co., Ltd.)

1:30 PM - 1:45 PM

[H-7-02] High Reliability CoFeB/MgO/CoFeB Magnetic Tunnel Junction FabricationUsing Low-damage Ion Beam Etching

^○H. Park¹, A. Teramoto¹, J. Tsuchimoto^1,2, K. Hashimoto¹, T. Suwa¹, M. Hayashi^1,2, R. Kuroda¹, S. Sugawa¹ (1.Tohoku Univ. (Japan), 2.Canon-Anelva Corp. (Japan))

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Presentation information

[H-7] MRAM, PCRAM and Emerging Memories

[H-7-02] High Reliability CoFeB/MgO/CoFeB Magnetic Tunnel Junction FabricationUsing Low-damage Ion Beam Etching

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