High Reliability CoFeB/MgO/CoFeB Magnetic Tunnel Junction FabricationUsing Low-damage Ion Beam Etching

H. Park

doi:https://doi.org/10.7567/SSDM.2019.H-7-02

1:30 PM - 1:45 PM

[H-7-02] High Reliability CoFeB/MgO/CoFeB Magnetic Tunnel Junction FabricationUsing Low-damage Ion Beam Etching

^○H. Park¹, A. Teramoto¹, J. Tsuchimoto^1,2, K. Hashimoto¹, T. Suwa¹, M. Hayashi^1,2, R. Kuroda¹, S. Sugawa¹ (1.Tohoku Univ. (Japan), 2.Canon-Anelva Corp. (Japan))

https://doi.org/10.7567/SSDM.2019.H-7-02

2019 International Conference on Solid State Devices and Materials

[H-7-02] High Reliability CoFeB/MgO/CoFeB Magnetic Tunnel Junction FabricationUsing Low-damage Ion Beam Etching