The Japan Society of Applied Physics

2:30 PM - 2:45 PM

[K-1-02] Demonstration of 1200 V / 1.4 mΩ cm2 Vertical GaN Planar MOSFET Fabricated by All Ion Implantation Process

R. Tanaka1, S. Takashima1, K. Ueno1, H. Matsuyama1, Y. Fukushima1, M. Edo1, K. Nakagawa2 (1.Fuji Electric Co., Ltd. (Japan), 2.Univ. of Yamanashi (Japan))

https://doi.org/10.7567/SSDM.2019.K-1-02