The Japan Society of Applied Physics

9:00 AM - 9:30 AM

[K-3-01 (Invited)] State-of-the Art IGBT and Development towards Higher Operation Temperature and Power Ratings

J. Vobecky1, C. Corvasce1, E. Buitrago1, M. Andenna1, B. Boksteen1, G. Paques1 (1.ABB Semiconductors (Switzerland))

https://doi.org/10.7567/SSDM.2019.K-3-01