Surface Activated Bonding of SiC/Diamond for Thermal Management of High-Output Power GaN HEMTs

Y. Minoura

doi:https://doi.org/10.7567/SSDM.2019.K-4-01

3:30 PM - 4:00 PM

[K-4-01 (Invited)] Surface Activated Bonding of SiC/Diamond for Thermal Management of High-Output Power GaN HEMTs

^○Y. Minoura^1,2, T. Ohki^1,2, N. Okamoto^1,2, A. Yamada^1,2, K. Makiyama^1,2, J. Kotani^1,2, S. Ozaki^1,2, M. Sato^1,2, N. Nakamura^1,2 (1.Fujitsu Ltd. (Japan), 2.Fujitsu Labs. Ltd. (Japan))

https://doi.org/10.7567/SSDM.2019.K-4-01

2019 International Conference on Solid State Devices and Materials

[K-4-01 (Invited)] Surface Activated Bonding of SiC/Diamond for Thermal Management of High-Output Power GaN HEMTs