2019 International Conference on Solid State Devices and Materials

Presentation information

Oral Presentation

04: Power Devices / High-speed Devices, and Materials

[K-4] GaN High Frequency Devices

Wed. Sep 4, 2019 3:30 PM - 4:45 PM IB014 (IB 1F)

Session Chair: T. Suzuki (JAIST), K. Tsuda (Toshiba Infrastructure Systems & Solutions Corp.)

3:30 PM - 4:00 PM

[K-4-01 (Invited)] Surface Activated Bonding of SiC/Diamond for Thermal Management of High-Output Power GaN HEMTs

Y. Minoura1,2, T. Ohki1,2, N. Okamoto1,2, A. Yamada1,2, K. Makiyama1,2, J. Kotani1,2, S. Ozaki1,2, M. Sato1,2, N. Nakamura1,2 (1.Fujitsu Ltd. (Japan), 2.Fujitsu Labs. Ltd. (Japan))

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