4:00 PM - 4:15 PM

[K-4-02] Low Turn-on Voltage and High Breakdown GaN Schottky Barrier Diodes for RF Energy Harvesting Applications

C.-H. Li¹,^○H. Wang¹, Y. Liu¹, S.D. Joseph², Y. Huang², S.S.H. Hsu¹ (1.National Tsing Hua Univ. (Taiwan), 2.Univ. of Liverpool (UK))

https://doi.org/10.7567/SSDM.2019.K-4-02