2019 International Conference on Solid State Devices and Materials

Presentation information

Oral Presentation

04: Power Devices / High-speed Devices, and Materials

[K-6] SiC MOS Interface

Thu. Sep 5, 2019 10:30 AM - 12:00 PM IB014 (IB 1F)

Session Chair: K.Y. Lee (National Taiwan Univ.), M. Sometani (AIST)

10:30 AM - 11:00 AM

[K-6-01 (Invited)] Carrier Scattering Mechanism in SiC Trench MOSFETs

K. Kutsuki1, E. Kagoshima2, T. Onishi2, J. Saito2, K. Yamamoto3, Y. Watanabe1 (1.Toyota Central R&D Labs., Inc. (Japan), 2.TOYOTA MOTOR CORP. (Japan), 3.DENSO CORP. (Japan))

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