GaN Wet Etching Process for Power and RF Devices

F. Horikiri

doi:https://doi.org/10.7567/SSDM.2019.K-7-01

1:00 PM - 1:30 PM

[K-7-01 (Invited)] GaN Wet Etching Process for Power and RF Devices

^○F. Horikiri¹, N. Fukuhara¹, H. Ohta², N. Asai², Y. Narita¹, T. Yoshida¹, T. Mishima², M. Toguchi³, K. Miwa³, T. Sato³ (1.SCIOCS Co. Ltd. (Japan), 2.Hosei Univ. (Japan), 3.Hokkaido Univ. (Japan))

https://doi.org/10.7567/SSDM.2019.K-7-01

2019 International Conference on Solid State Devices and Materials

[K-7-01 (Invited)] GaN Wet Etching Process for Power and RF Devices