2019 International Conference on Solid State Devices and Materials

Presentation information

Oral Presentation

04: Power Devices / High-speed Devices, and Materials

[K-7] GaN Device Technologies

Thu. Sep 5, 2019 1:00 PM - 2:30 PM IB014 (IB 1F)

Session Chair: S. Ozaki (Fujitsu Labs. Ltd.), T. Suzuki (JAIST)

1:00 PM - 1:30 PM

[K-7-01 (Invited)] GaN Wet Etching Process for Power and RF Devices

F. Horikiri1, N. Fukuhara1, H. Ohta2, N. Asai2, Y. Narita1, T. Yoshida1, T. Mishima2, M. Toguchi3, K. Miwa3, T. Sato3 (1.SCIOCS Co. Ltd. (Japan), 2.Hosei Univ. (Japan), 3.Hokkaido Univ. (Japan))

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