[D-2] GaN Vertical Device Technologies

Mon. Sep 28, 2020 4:00 PM - 5:45 PM Room D

Session Chair: Manabu Yanagihara (Panasonic Corp.), Heiji Watanabe (Osaka Univ.)

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4:00 PM - 4:30 PM

[D-2-01 (Invited)] Vertical GaN Power Device -Expectation and Challenges-

〇Tetsu Kachi¹ (1. Nagoya Universtiy(Japan))

4:30 PM - 4:45 PM

[D-2-02] Improvement of Channel Property of GaN Vertical Trench MOSFET by Compensating Nitrogen Vacancies with Nitrogen Plasma Treatment

〇Takashi Ishida^1,2, Kyung Pil Nam¹, Maciej Matys¹, Tsutomu Uesugi¹, Jun Suda¹, Tetsu Kachi¹ (1. Nagoya Univ.(Japan), 2. MIRISE Technologies Corp.(Japan))

4:45 PM - 5:00 PM

[D-2-03] A High Voltage Vertical GaN-on-GaN Schottky Barrier Diode with High-Energy Fluorine Ion Implanted Guard Rings

〇Ruiyuan Yin¹, Chiachia Li¹, Bin Zhang¹, Jinyan Wang¹, Yunyi Fu¹, Cheng Paul Wen¹, YiLong Hao¹, Bo Shen², Maojun Wang¹ (1. Inst. of Microelectronics, Peking Univ.(China), 2. School of Physics, Peking Univ.(China))

5:00 PM - 5:15 PM

[D-2-04] On-resistance and Breakdown-Phenomenon Dependences on Threading Dislocations in Vertical p-n Junction Diodes

〇Hiroshi - Ohta¹, Naomi - Asai¹, Fumimasa - Horikiri², Yoshinobu - Narita², Takehiro - Yoshida², Tomoyoshi - Mishima¹ (1. Hosei Univ.(Japan), 2. SCIOCS Co., Ltd.(Japan))

5:15 PM - 5:30 PM

[D-2-05] Improvement of Contacts on Etched p-type GaN by Low-bias ICP–RIE

〇Takeru Kumabe¹, Yuto Ando¹, Hirotaka Watanabe², Yoshio Honda², Manato Deki^1,3, Atsushi Tanaka^2,4, Shugo Nitta², Hiroshi Amano^2,3,4,5 (1. Grad. Sch. of Eng. Nagoya Univ.(Japan), 2. IMaSS Nagoya Univ.(Japan), 3. VBL Nagoya Univ.(Japan), 4. NIMS(Japan), 5. ARC Nagoya Univ.(Japan))

5:30 PM - 5:45 PM

[D-2-06] Mapping of Photoelectrochemical Etched Ni/GaN Schottky Contacts Using Scanning Internal Photoemission Microscopy -- Comparison between n- and p-type GaN samples --

〇Ryo Matsuda¹, Fumimasa Horikiri², Yoshinobu Narita², Takehiro Yoshida², Noboru Fukuhara², Tomoyoshi Mishima³, Kenji Shiojima¹ (1. Univ. of Fukui(Japan), 2. SCIOCS(Japan), 3. Hosei Univ.(Japan))

Session information