2020 International Conference on Solid State Devices and Materials

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Oral presentation

04: Power / High-speed Devices and Materials

[D-2] GaN Vertical Device Technologies

Mon. Sep 28, 2020 4:00 PM - 5:45 PM Room D

Session Chair: Manabu Yanagihara (Panasonic Corp.), Heiji Watanabe (Osaka Univ.)

4:30 PM - 4:45 PM

[D-2-02] Improvement of Channel Property of GaN Vertical Trench MOSFET by Compensating Nitrogen Vacancies with Nitrogen Plasma Treatment

〇Takashi Ishida1,2, Kyung Pil Nam1, Maciej Matys1, Tsutomu Uesugi1, Jun Suda1, Tetsu Kachi1 (1. Nagoya Univ.(Japan), 2. MIRISE Technologies Corp.(Japan))

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