Mapping of Photoelectrochemical Etched Ni/GaN Schottky Contacts Using Scanning Internal Photoemission Microscopy -- Comparison between n- and p-type GaN samples --

Ryo Matsuda

doi:https://doi.org/10.7567/SSDM.2020.D-2-06

5:30 PM - 5:45 PM

[D-2-06] Mapping of Photoelectrochemical Etched Ni/GaN Schottky Contacts Using Scanning Internal Photoemission Microscopy -- Comparison between n- and p-type GaN samples --

〇Ryo Matsuda¹, Fumimasa Horikiri², Yoshinobu Narita², Takehiro Yoshida², Noboru Fukuhara², Tomoyoshi Mishima³, Kenji Shiojima¹ (1. Univ. of Fukui(Japan), 2. SCIOCS(Japan), 3. Hosei Univ.(Japan))

https://doi.org/10.7567/SSDM.2020.D-2-06

2020 International Conference on Solid State Devices and Materials

[D-2-06] Mapping of Photoelectrochemical Etched Ni/GaN Schottky Contacts Using Scanning Internal Photoemission Microscopy -- Comparison between n- and p-type GaN samples --