2020 International Conference on Solid State Devices and Materials

Presentation information

Oral presentation

04: Power / High-speed Devices and Materials

[D-6] SiC MOS Devices

Tue. Sep 29, 2020 4:00 PM - 5:45 PM Room D

Session Chair: Tomohide Terashima (Mitsubishi Electric Corp.), Shunta Harada (Nagoya Univ.)

4:00 PM - 4:30 PM

[D-6-01 (Invited)] Recent Progress of Silicon Carbide Super-Junction MOSFETs

〇Ryoji Kosugi1, Shiyang Ji1, Kazuhiro Mochizuki1, Takeharu Kuroiwa1, Hiroshi Yamaguchi1 (1. AIST(Japan))

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