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[D-6-02] Anisotropic temperature distribution causing an incremental trend in the saturated drain-current of SiC MOSFET

〇Shogo Ogawa¹, Taketoshi Tanaka¹, Yohei Nakamura¹, Ken Nakahara¹ (1. Rohm Co. Ltd.(Japan))

https://doi.org/10.7567/SSDM.2020.D-6-02