Suppression of Channel Shortening and Reduction of S/D Parasitic Resistance in InGaZnO channel BEOL Transistor by Insertion of thermally stable InAlZnO Contact Layer

4:30 PM - 4:45 PM

[J-6-02] Suppression of Channel Shortening and Reduction of S/D Parasitic Resistance in InGaZnO channel BEOL Transistor by Insertion of thermally stable InAlZnO Contact Layer

〇Yuta Sato¹, Hirokazu Fujiwara¹, Nobuyoshi Saito¹, Tomomasa Ueda¹, Keiji Ikeda¹ (1. KIOXIA Corp.(Japan))