[B-2] Wide Bandgap Materials

Tue. Sep 27, 2022 2:00 PM - 3:45 PM 102 (1F)

Session Chair: Shingo Ogawa (Toray Res. Center, Inc.), Takuya Hoshi (NTT Device Technology Lab.)

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2:00 PM - 2:30 PM

[B-2-01 (Invited)] Metrology to Support Processing and Development of 4H-SiC CMOS and Power Devices at Fraunhofer IISB from Research to Multi Project Wafer Services

〇Mathias Rommel¹, Tobias Erlbacher¹ (1. Fraunhofer Inst. for Integrated Systems and Device Tech. IISB (Germany))

Presentation style: Online

2:30 PM - 3:00 PM

[B-2-02 (Invited)] Morphology and Properties of Diamond Deposited on Grooved 4H-SiC Substrate

〇Kuan Yew Cheong¹, Xiufei Hu², Ming Li², Yingnan Wang², Yan Peng², Gongbin Tang², Mingsheng Xu², Xiangang Xu², Jisheng Han², Xiwei Wang², Bin Li², Yiqiu Yang² (1. Universiti Sains Malaysia (Malaysia), 2. Shandong Univ. (China))

Presentation style: Online

3:00 PM - 3:15 PM

[B-2-03] Characterization of Ultra High-Concentration Nitrogen-doped CVD Diamond

〇Mayu Ueda¹, Kyosuke Hayasaka¹, Kyotaro Kanehisa¹, Yasuhiro Takahashi¹, Chiyuki Wakabayashi¹, Taisuke Kageura², Hiroshi Kawarada^1,3 (1. Waseda Univ. (Japan), 2. National Inst. of Advanced Indus. Sci. and Tech. (Japan), 3. Kagami Memorial Res. Inst. for Materials Sci. and Tech. (Japan))

Presentation style: Online

3:15 PM - 3:30 PM

[B-2-04] Importance of dissolving source precursor of Ga(C₅H₇O₂)₃ with HCl in mist CVD for α-Ga₂O₃ growth

〇Rie Yamada¹, Atsushi Sekiguchi¹, Takeyoshi Onuma¹, Tohru Honda¹, Tomohiro Yamaguchi¹ (1. Univ. of Kogakuin (Japan))

Presentation style: Online

3:30 PM - 3:45 PM

[B-2-05] First-Principles Study for Self-limiting Growth of GaN Layers on AlN(0001) Surface

〇Haruka Sokudo¹, Toru Akiyama¹, Tomonori Ito¹ (1. Univ. of Mie (Japan))

Presentation style: On-site (in-person)

Session information

[B-2] Wide Bandgap Materials

[B-2-01 (Invited)] Metrology to Support Processing and Development of 4H-SiC CMOS and Power Devices at Fraunhofer IISB from Research to Multi Project Wafer Services

[B-2-02 (Invited)] Morphology and Properties of Diamond Deposited on Grooved 4H-SiC Substrate

[B-2-03] Characterization of Ultra High-Concentration Nitrogen-doped CVD Diamond

[B-2-04] Importance of dissolving source precursor of Ga(C₅H₇O₂)₃ with HCl in mist CVD for α-Ga₂O₃ growth

[B-2-05] First-Principles Study for Self-limiting Growth of GaN Layers on AlN(0001) Surface

Authentication

Session information

[B-2] Wide Bandgap Materials

[B-2-01 (Invited)] Metrology to Support Processing and Development of 4H-SiC CMOS and Power Devices at Fraunhofer IISB from Research to Multi Project Wafer Services

[B-2-02 (Invited)] Morphology and Properties of Diamond Deposited on Grooved 4H-SiC Substrate

[B-2-03] Characterization of Ultra High-Concentration Nitrogen-doped CVD Diamond

[B-2-04] Importance of dissolving source precursor of Ga(C5H7O2)3 with HCl in mist CVD for α-Ga2O3 growth

[B-2-05] First-Principles Study for Self-limiting Growth of GaN Layers on AlN(0001) Surface

Authentication

[B-2-04] Importance of dissolving source precursor of Ga(C₅H₇O₂)₃ with HCl in mist CVD for α-Ga₂O₃ growth