〇Lihua An¹, Yue Xin¹, Zhengping Yuan¹, Yumeng Yang¹, Zhifeng Zhu¹ (1. ShanghaiTech Univ. (China))

〇Eunryeong Hong¹, Seonuk Jeon², Heebum Kang¹, Hyun Wook Kim¹, Nayeon Kim¹, Kibong Moon³, Jiyong Woo¹ (1. Kyungpook National University, School of Electronic and Electrical Engineering (Korea), 2. Kyungpook National University, School of Electronics Engineering (Korea), 3. Pohang University of Science and Technoloy, Department of Materials Science and Engineering (Korea))

〇Yoshiteru Amemiya¹, Junichi Tsuchimoto^1,2, Hiroyuki Hosoya², Hiroki Nakanishi¹, Chihiro Watanabe¹, Akinobu Teramoto¹ (1. Hiroshima Univ. (Japan), 2. CANON ANELVA Corp. (Japan))

〇Quanzhou Zhu¹, Jun Lan¹, Bing Zhou¹, Muhammad Zaheer¹, Jinxuan Liang¹, Peng Chen¹, Feichi Zhou¹, Longyang Lin¹, Guobiao Zhang¹, Mei Shen¹, Xuewei Feng², Zhen Chen³, Zhixiong Li³, Yida Li¹ (1. Southern University of Science and Technology (China), 2. Shanghai Jiao Tong University (China), 3. Shenzhen Longsys Electronics Co., Ltd (China))

〇Yen Jung Chen¹, Hung-Yang Lo¹, Jan-Chi Yang², Wen-Wei Wu¹ (1. National Yang Ming Chiao Tung University (Taiwan), 2. National Cheng Kung University (Taiwan))

〇Martina Tomelleri^1,2, Anthony Albanese¹, Chiara Sabbione¹, Niccolo Castellani¹, Christophe Licitra¹, Valentina M. Giordano ³, Daniel Benoit², Francoise Hippert⁴, Pierre Noe¹ (1. Inst. CEA-LETI, F-38000, Grenoble (France), 2. Indus. STMicroelectronics, F-38926 Crolles (France), 3. ILM, UMR 5306 Univ. Lyon 1-CNRS, F-69622 Villeurbanne Cedex (France), 4. Univ. Grenoble Alpes, CNRS, Grenoble INP, LMGP, F-38000 Grenoble (France))