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Oral Presentation

Focus Session 2 (Area1&2&8)

[F-9] CMOS and Memory Applications of Low Dimensional Materials I

Thu. Sep 29, 2022 1:30 PM - 3:15 PM 201 (2F)

Session Chair: Toshifumi Irisawa (AIST), Hiroshi Naganuma (Tohoku Univ.)

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1:30 PM - 2:00 PM

[F-9-01 (Invited)] Novel high-k insulator deposition on 2D materials for future electronics

〇Kosuke Nagashio¹ (1. Univ. of Tokyo (Japan))

Presentation style: On-site (in-person)

2:00 PM - 2:15 PM

[F-9-02] Realization of P-type MoTe2-TFET Via Laser-induced Doping Technique

〇Tianshun Xie¹, Kazuki Fukuda¹, Mengnan Ke¹, Nobuyuki Aoki¹ (1. Chiba University (Japan))

Presentation style: On-site (in-person)

2:15 PM - 2:30 PM

[F-9-03] Machine Learning Attack Resilient MoS₂ Fe-FET True Random Number Generator for Hardware Security in IoT: 0.7 pJ/bit Writing Energy, Self-Correction Function, and 1250 bit/s Seed Throughput

〇Yu-Chieh Chien¹, Heng Xiang¹, Jianze Wang¹, Yufei Shi¹, Xuanyao Fong¹, Kah-Wee Ang^1,2 (1. National Univ. of Singapore (Singapore), 2. Inst. of Materials Res. and Eng., A*STAR (Singapore))

Presentation style: On-site (in-person)

2:30 PM - 2:45 PM

[F-9-04] Moire Schottky Barriers for Lower Contact Resistances on layered MoS₂

〇John Robertson¹, Zhaofu Zhang¹, Yuzheng Guo² (1. Cambridge University (UK), 2. Wuhan University (China))

Presentation style: On-site (in-person)

2:45 PM - 3:15 PM

[F-9-05 (Invited)] Comparing h-BN and MgO as Tunnel Barriers in scaled Magnetic Tunnel Junctions

〇John Robertson¹ (1. Cambridge Univ. (UK))

Presentation style: On-site (in-person)

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