Molecular beam epitaxy of Si<sub>1</sub><sub>−<em>x</em></sub>Sn<em><sub>x</sub></em> layers with 10%-Sn content on Si<sub>1</sub><sub>−<em>y</em></sub>Ge<em><sub>y</sub></em> buffers/2022 International Conference on Solid State Devices and Materials