[C-2] Inorganic Semiconductor Materials & Applications

[C-2-01] Preparation and thermoelectric characterization of boron-doped silicon nanocrystals/silicon oxide multilayers

〇Keisuke Shibata¹, Shinya Kato², Masashi Kurosawa¹, Kazuhiro Gotoh¹, Satoru Miyamoto¹, Noritaka Usami¹, Yasuyoshi Kurokawa¹ (1. Nagoya Univ. (Japan), 2. Nagoya Inst. Tech. (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.C-2-01

Boron-doped silicon nanocrystals (Si-NCs)/silicon oxide (SiOy) multilayers were prepared by plasma enhanced chemical vapor deposition (PECVD) and post-annealing. The diameter of Si-NCs was changed by varying the thickness of Si-rich amorphous silicon oxide (a-SiOx) layer from ta-SiOx=3 to 50 nm. The electrical conductivity (σ) showed an increased tendency with in-creasing ta-SiOx from 3 to 13 nm. Further increase of ta-SiOx resulted in the saturation of σ at about 5.7 kS･m-1. Thermal conductivity was in the range of 1.4-1.5 W･m-1･K-1 and almost independent of the thickness of the Si-rich layer (ta-SiOx), which is much lower than that of bulk Si. A maximum power factor of 0.33 mW･m-1･K-2 was obtained at ta-SiOx=13 nm.