[C-8] Spintronics I

[C-8-02] Magnetic anisotropy of n-type ferromagnetic semiconductor (In, Fe)Sb studied by ferromagnetic resonance: Control by epitaxial strain

〇Akhil Sanjaya Kumar Pillai¹, Shobhit Goel¹, Le Duc Anh^1,2,3, Masaaki Tanaka^1,3 (1. Univ. of Tokyo (Japan), 2. PRESTO (Japan), 3. CSRN (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.C-8-02

We report the first comprehensive study on the magnetic anisotropy of n-type ferromagnetic semiconductor (FMS) (In,Fe)Sb grown on different buffer layers (InSb, AlSb, GaSb, InAs), using ferromagnetic resonance studies. When the epitaxial strain induced in (In,Fe)Sb is changed from tensile to compressive, we see a change in the values of magneto-crystalline anisotropy constant, favoring perpendicular magnetization. However, due to strong shape anisotropy, effective magnetization is still of in-plane nature. This work suggests the ability to control magnetic anisotropy in (In,Fe)Sb using strain.