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[D-2-02] High-Sensitivity Extended Gate Field-Effect Transistor-Type Dopamine Sensor Based on Resistance-Coupling Effect
Presentation style: Online
https://doi.org/10.7567/SSDM.2022.D-2-02
In this study, we propose an extended gate field-effect transistor (EGFET) based high-sensitivity dopamine (DA) sensor using resistive coupling effect to effectively amplify electrical signals. The constructed dopamine sensor has a structure in which an individual transducer unit and a sensing unit are electrically connected. The SnO2 sensing membrane of EG had a low dopamine sensitivity of 10.14 mV/log [DA], but the resistance coupling effect greatly amplified the sensitivity of dopamine up to 8.67 times and 87.95 mV/log [DA]. In addition, it was con-firmed that the resistance-binding effect can linearly amplify dopamine sensitivity. Therefore, the proposed EGFET-based sensor is expected to be an effective method for fast and accurate detection of dopamine by utilizing the resistive coupling effect.
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