[F-10] CMOS and Memory Applications of Low Dimensional Materials II

[F-10-04] Demonstration of Single-gate MoS2 Tunnel FET with Natural In-plane Heterojunction

〇Tomohiro Fukui¹, Tomonori Nishimura¹, Takashi Taniguchi², Kenji Watanabe², Kosuke Nagashio¹ (1. Univ. of Tokyo (Japan), 2. Inst. for Materials Science (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.F-10-04

In this work, Nb-doped p+-MoS2 Tunnel FET was fabricated and demonstrated by single gate operation. It was clarified that type-III band alignment was formed at natural in-plane heterojunction. Furthermore, the additional test device revealed the two kinds current paths in the natural in-plane heterojunction device.