[F-2] PCM, MRAM, and RRAM

[F-2-04] Hf_1-xZr_xO₂ RRAM Prepared via Co-Sputtering with High Uniformity, Fast Switching Time of 10 ns, and Low Switching Energy of 20 pJ

〇Quanzhou Zhu¹, Jun Lan¹, Bing Zhou¹, Muhammad Zaheer¹, Jinxuan Liang¹, Peng Chen¹, Feichi Zhou¹, Longyang Lin¹, Guobiao Zhang¹, Mei Shen¹, Xuewei Feng², Zhen Chen³, Zhixiong Li³, Yida Li¹ (1. Southern University of Science and Technology (China), 2. Shanghai Jiao Tong University (China), 3. Shenzhen Longsys Electronics Co., Ltd (China))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.F-2-04

In this work, the performance enhancement of HfxZr1-xO2 (HZO) using co-sputtering is reported. The HZO RRAMs shows reduced operating voltages (by 30%) as compared to control HfO2 and ZrO2 RRAMs respectively, attributed to the increase of oxygen vacancies as a result of the Zr alloying. Consequently, DC endurance greater than 350 cycles, retention time exceeding 104 s, fast switching time down to 10 ns, and switching energy of 20 pJ were achieved. Furthermore, characterization of multiple HZO RRAMs shows excellent uniformity (coefficient of variation less than 0.8), thus paving a potential path-way for further development of HZO RRAM for use in future storage and computing applications.