HfO2–based FeRAM, from material perspective to circuit application

Jean Coignus

doi:https://doi.org/10.7567/SSDM.2022.F-3-01

Presentation information

Oral Presentation

02: Advanced and Emerging Memories / New Applications

[F-3] Ferroelectric Devices

Tue. Sep 27, 2022 4:15 PM - 6:00 PM 201 (2F)

Session Chair: Laurent Grenouillet (CEA-Leti), Hiroshi Naganuma (Tohoku Univ.)

4:15 PM - 4:45 PM

[F-3-01 (Invited)] HfO2–based FeRAM, from material perspective to circuit application

〇Jean Coignus¹, Terry Francois¹, Julie Laguerre¹, Simon Martin¹, Catherine Carabasse¹, Nicolas Vaxelaire¹, Adam Makosiej², Bastien Giraud ², Francois Andrieu ¹, Laurent Grenouillet¹ (1. CEA-Leti (France), 2. CEA-LIST (France))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.F-3-01

Abstract password authentication.
Password to download abstracts has been informed in the confirmation mail.