A Capacitorless DRAM Based on Bulk FinFET for the Immune of Work-Function Variation Effect

Sang Ho Lee

doi:https://doi.org/10.7567/SSDM.2022.F-4-03

9:30 AM - 9:45 AM

[F-4-03] A Capacitorless DRAM Based on Bulk FinFET for the Immune of Work-Function Variation Effect

〇Sang Ho Lee¹, Jin Park¹, So Ra Min¹, Geon Uk Kim¹, Ga Eon Kang¹, Jun Hyeok Heo¹, Young Jun Yoon², Jae Hwa Seo³, Jaewon Jang¹, Jin-Hyuk Bae¹, Sin-Hyung Lee¹, In Man Kang¹ (1. Kyungpook National Univ. (Korea), 2. Korea Atomic Energy Res. Inst. (Korea), 3. Korea Electrotechnology Res. Inst. (Korea))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.F-4-03

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[F-4] Emerging Memory Devices

[F-4-03] A Capacitorless DRAM Based on Bulk FinFET for the Immune of Work-Function Variation Effect

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