The fabrication of p-type tunnel field effect transistor (TFET) composed of a transition metal dichalcogenide has great challenges due to the difficulty of n-type heavy doping. In this study, a p-type TFET has been successfully fabricated by using laser-induced doping technique to modulate the MoTe2 crystalline to n-type and p-type heavily doped regions to form a p+/i/n+ or i /n+ in-plane heterojunction.