High Volume Cryogenic Characterization of Silicon Spin Qubit Devices from a 300mm Process Line

Otto Zietz

doi:https://doi.org/10.7567/SSDM.2022.G-4-01

9:00 AM - 9:30 AM

[G-4-01 (Invited)] High Volume Cryogenic Characterization of Silicon Spin Qubit Devices from a 300mm Process Line

〇Otto Zietz¹, Samuel Neyens¹, Ravi Pillarisetty¹, Thomas Watson¹, Hubert George¹, Eric Henry¹, Florian Luthi¹, Roza Kotlyar¹, Lester Lampert¹, Guoji Zheng¹, Joelle Corrigan¹, Stephanie Bojarski¹, Jeanette Roberts¹, Jim Clarke¹ (1. Intel (United States of America))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.G-4-01

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Presentation information

[G-4] Quantum Computing II

[G-4-01 (Invited)] High Volume Cryogenic Characterization of Silicon Spin Qubit Devices from a 300mm Process Line

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