[J-10] DRAM, SRAM, and 3D NAND

[J-10-06] Analytical Modeling of Intrinsic Threshold Voltage and Subthreshold Slope for 3D NAND Flash Memory with a Gaussian Doping Profile

〇Amit Kumar¹, Shubham Sahay¹ (1. Indian Inst. of Tech., Kanpur (India))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.J-10-06

In this work, we formulate an analytical model for the intrinsic threshold voltage and the subthreshold slope of 3D NAND flash cells with uniform threshold voltage distribution across different word line (WL) layers along the string. The results obtained using the analytical model are in close agreement with the TCAD simulations validating the accuracy of the developed model. We also utilize the analytical model to provide insights and necessary design guidelines for further optimizing the performance.