2022 International Conference on Solid State Devices and Materials

Presentation information

Oral Presentation

02: Advanced and Emerging Memories / New Applications

[J-10] DRAM, SRAM, and 3D NAND

Thu. Sep 29, 2022 4:00 PM - 5:45 PM 303 (3F)

Session Chair: Norikatsu Takaura (Hitachi, Ltd.), Soichi Sugiura (Micron Technology Inc.)

5:30 PM - 5:45 PM

[J-10-07] Dually Functional Wide Bandgap Oxides Bilayer SiO2/Al2O3 Based Memristor for Nonvolatile Memory and Photo Sensing

〇Dayanand Kumar1, Lana Joharji1, Nazek El Atab1 (1. King Abdullah University of Science and Technology (Saudi Arabia))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.J-10-07

In this work, we investigate bilayer SiO2/Al2O3-based memristor for nonvolatile memory and photo sensing application. The current opto-electronic ITO/SiO2/Al2O3/Pt device exhibits good photo sensing features in terms of electrical SET and optical RESET endurance of at least 100 cycles for blue light without any disruption. Furthermore, the device shows highly stable retention (104 s) without any degradation and excellent device-to-device uniformity. This work not only enables us to use our device in memory capabilities but also provides a significant advantage for photo sensing.

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