2:00 PM - 2:30 PM

[J-2-01 (Invited)] Advanced GaN HEMTs for high-efficiency and high-frequency power amplifiers

〇Yusuke Kumazaki¹, Shiro Ozaki¹, Yuichi Minoura¹, Atsushi Yamada¹, Naoya Okamoto¹, Naoki Hara¹, Yasuhiro Nakasha¹, Junji Kotani¹, Masaru Sato¹, Toshihiro Ohki¹ (1. Fujitsu Ltd. (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.J-2-01