[J-6] Interface Technologies

[J-6-07] First-principles study on electronic structure at step edge of SiC/SiO₂ interface

〇Kazuma Yokota¹, Mitsuharu Uemoto¹, Tomoya Ono¹ (1. Kobe Univ. (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.J-6-07

We investigate electronic structures at the step edge of 4H-SiC/SiO2 interface by first-principles electronic-structure calculation. The local density of states and the spatial distribution of the charge density of the conduction band minimum (CBM) are investigated. It is found that the CBM at the upper terrace of the steps are significantly affected by the local atomic structure of the SiO2 side and the presence of the step edges.