2022 International Conference on Solid State Devices and Materials

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Oral Presentation

04: Power / High-speed Devices and Materials

[J-9] GaN Power Devices

Thu. Sep 29, 2022 1:30 PM - 3:00 PM 303 (3F)

Session Chair: Toru Sugiyama (Toshiba Device & Strage Corp.), Heiji Watanabe (Osaka Univ.)

1:30 PM - 2:00 PM

[J-9-01 (Invited)] Non-destructive Breakdown in GaN/SiC-based Hybrid HEMT

〇Akira Nakajima1, Hirohisa Hirai1, Yoshinao Miura1, Shinsuke Harada1 (1. AIST (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.J-9-01

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