2022 International Conference on Solid State Devices and Materials

Presentation information

Oral Presentation

04: Power / High-speed Devices and Materials

[J-9] GaN Power Devices

Thu. Sep 29, 2022 1:30 PM - 3:00 PM 303 (3F)

Session Chair: Toru Sugiyama (Toshiba Device & Strage Corp.), Heiji Watanabe (Osaka Univ.)

2:00 PM - 2:15 PM

[J-9-02] Two-dimensional characterization of the edge structure of Ni/n-GaN Schottky contacts under applied voltage by scanning internal photoemission microscopy

〇Hiroki Imabayashi1, Fumimasa Horikiri2, Yoshinobu Narita2, Noboru Fukuhara2, Tomoyoshi Mishima3, Kenji Shiojima1 (1. Univ. of Fukui (Japan), 2. SCIOCS (Japan), 3. Hosei Univ. (Japan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.J-9-02

We report the experimental results on mapping characterization of the edge structure of Ni/n-GaN Schottky contacts formed with a metal-shadow-mask by scanning internal photoemission microscopy (SIPM). The high breakdown-voltage and uniform SIPM signals under ap-plied voltage were obtained for the fresh sample. On the other hand, SIPM signals increased significantly at the electrode edge for the aged sample compared with the electrode center. It is considered that the influence of the electric field concentration on the electrode periphery was detected as a photocurrent. We found that SIPM is available to clarify the relationship between the difference in the structure and electric field concentration at the edge of electrode.

Abstract password authentication.
Password to download abstracts has been informed in the confirmation mail.

Password