The Japan Society of Applied Physics

2022 International Conference on Solid State Devices and Materials

2022 International Conference on Solid State Devices and Materials

2022年9月26日 〜 2022年12月23日
幕張メッセ

14:30 〜 14:45

[J-9-04] Stability of Monolithically Integrated Power devices for 200V GaN-on-SOI power circuits platform

〇Deepthi Cingu1, Olga Syshchyk1, Dirk Wellekens1, Thibault Cosnier1, Matteo Borga1, Urmimala Chatterjee 1, Benoit Bakeroot2, Niels Posthuma1, Stefaan Decoutere1 (1. Imec (Belgium), 2. Center for Microsystems Technology (Belgium))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.J-9-04

The stability of the monolithically integrated Enhance-ment-mode p-GaN HEMTs, Depletion Mode MIS HEMTs and Schottky Barrier diodes in a 200 V GaN-on-SOI technology is studied for two different dielectric options. This paper focuses mainly on wafer-level High Temper-ature Reverse Bias (HTRB), High Temperature Gate Bias (HTGB) and High Temperature Forward Bias (HTFB) experiments. The results display that the addition of the integral components has shown no impact on the stability of the baseline p-GaN HEMTs.