[A-3] Growth and Synthesis: Low Dimensional Devices and Materials

2023年9月7日(木) 09:00 〜 10:00 Room A (131+132, Bldg. 1)

Session Chairs: Masafumi Jo (RIKEN), Satoshi Hiura (Hokkaido Univ.)

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09:00 〜 09:30

[A-3-01 (Invited)] Core-shell Nanowire LEDs Enabled by Polarity-Controlled Growth of Gallium Nitride Nanowire Arrays on Silicon

^○Matt Brubaker¹, Alexana Roshko¹, Todd Harvey¹, Kris Bertness¹ (1. National Inst. of Standards and Tech. (United States of America))

09:30 〜 09:45

[A-3-02] Ultra-High Packing Density Vertical GaN Nanocolumn SBDs using Bottom-Up Growth Approach

^○Hiroyuki Shimada¹, Hironobu Kariyazono¹, Yohei Nakagawa¹, Shinji Terao¹, Kentaro Takayanagi¹, Koichiro Akasaka¹, Shunsuke Ishizawa¹, Koichi Morozumi², Rie Togashi³, Katsumi Kishino³ (1. Core Tech. Development Dept., Seiko Epson Corp. (Japan), 2. Material Analysis & CAE Center, Seiko Epson Corp. (Japan), 3. Sophia Nanotech. Res. Center, Sophia Univ. (Japan))

09:45 〜 10:00

[A-3-03] Evaluation of Si and Ge Segregation from Si _0.2Ge _0.8(111) through Al and Ag Layer

^○Taiki Sakai¹, Akio Ohta², Noriyuki Taoka³, Junji Yuhara¹, Katsunori Makihara¹, Yuji Yamamoto⁴, Wei-chen Wen⁴, Seiichi Miyazaki¹ (1. Nagoya Univ. (Japan), 2. Fukuoka Univ. (Japan), 3. Aichi Inst. of Tech. (Japan), 4. IHP (Germany))

セッション情報

[A-3] Growth and Synthesis: Low Dimensional Devices and Materials

[A-3-01 (Invited)] Core-shell Nanowire LEDs Enabled by Polarity-Controlled Growth of Gallium Nitride Nanowire Arrays on Silicon

[A-3-02] Ultra-High Packing Density Vertical GaN Nanocolumn SBDs using Bottom-Up Growth Approach

[A-3-03] Evaluation of Si and Ge Segregation from Si _0.2Ge _0.8(111) through Al and Ag Layer

認証

セッション情報

[A-3] Growth and Synthesis: Low Dimensional Devices and Materials

[A-3-01 (Invited)] Core-shell Nanowire LEDs Enabled by Polarity-Controlled Growth of Gallium Nitride Nanowire Arrays on Silicon

[A-3-02] Ultra-High Packing Density Vertical GaN Nanocolumn SBDs using Bottom-Up Growth Approach

[A-3-03] Evaluation of Si and Ge Segregation from Si 0.2Ge 0.8(111) through Al and Ag Layer

認証

[A-3-03] Evaluation of Si and Ge Segregation from Si _0.2Ge _0.8(111) through Al and Ag Layer