[A-4] Characterization II: Low Dimensional Devices and Materials

Thu. Sep 7, 2023 10:45 AM - 11:45 AM Room A (131+132, Bldg. 1)

Session Chairs: Masafumi Jo (RIKEN), Takayuki Arie (Osaka Metropolitan Univ.)

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10:45 AM - 11:00 AM

[A-4-01] From h-BN to graphene: comprehensive structural characterizations of hybrid carbon-doped h-BN to understand its electrical conductivity

^○Supawan Ngamprapawat¹, Jimpei Kawase¹, Tomonori Nishimura¹, Kenji Watanabe², Takashi Taniguchi², Kosuke Nagashio¹ (1. Univ. of Tokyo (Japan), 2. NIMS (Japan))

11:00 AM - 11:15 AM

[A-4-02] Characterization of Nanowire Light-Emitting Diodes with InP/InAsP Heterostructures Emitting in Telecom Band

Manami Okamoto¹, Tomoya Akamatsu¹, Katsuhiro Tomioka¹, ^○Junichi Motohisa¹ (1. Hokkaido Univ. (Japan))

11:15 AM - 11:30 AM

[A-4-03] Strong Gate Modulation Effect in Nanoscale TiN Channels

^○Yu- An Lai¹, Chin-Te Wang¹, Yu-An Chou¹, Shun-Tsung Lo¹, Thi Hien Do¹, Sheng-Di Lin¹ (1. National Yang Ming Chiao Tung University (Taiwan))

11:30 AM - 11:45 AM

[A-4-04] Thermal Desorption Study of PCz-sorted SWCNTs for Electronic Hourglass Device

^○Yang Xu¹, Jiayi Wang¹, Nannan You¹, Hong Dong³, Weihua Wang³, Xuelei Liang⁴, Shengkai Wang^1,2 (1. Inst. of Microelectronics of Chinese Academy of Sci. (China), 2. Univ. of Chinese Academy of Sci. (China), 3. Department of Electronic Sci. and Eng. and Tianjin Key Lab. of Photo-Electronic Thin Film Device and Tech., Nankai Univ. (China), 4. Key Lab. for the Physics and Chemistry of New Device, Peking Univ. (China))

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