[B-6] Neuromorphic devices and materials

Fri. Sep 8, 2023 10:45 AM - 12:15 PM Room B (133+134, Bldg. 1)

Session Chairs: Yoshifumi Nishi (Toshiba Corp.), Takashi Tsuchiya (NIMS)

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10:45 AM - 11:15 AM

[B-6-01 (Invited)] Hardware Implementation of Probabilistic Models through Nanodevice Variability

^○Louis Hutin¹, Djohan Bonnet¹, Kamal Danouchi², Tifenn Hirtzlin¹, Thomas Dalgaty³, Philippe Talatchian², Francois Andrieu¹, Kevin Garello², Damien Querlioz⁴, Elisa Vianello¹ (1. CEA-Leti (France), 2. CEA-CNRS-SPINTEC (France), 3. CEA-List (France), 4. Univ. Paris-Saclay, CNRS (France))

11:15 AM - 11:30 AM

[B-6-02] Deep Physical Reservoir Computing Achieved by Electric Double Layer Ion-Gating Reservoir

^○Daiki Nishioka^1,2, Takashi Tsuchiya¹, Wataru Namiki¹, Masataka Imura¹, Yasuo Koide¹, Tohru Higuchi², Kazuya Terabe¹ (1. National Institute for Materials Science (Japan), 2. Tokyo Univ. of Sci. (Japan))

11:30 AM - 11:45 AM

[B-6-03] Scaling of Device Area for Ultra-low-power Dissipation in 2-terminal Protonic Artificial Synapses

Satya Prakash Pati¹, Satoshi Hamasuna¹, ^○Takeaki Yajima¹ (1. Kyushu University (Japan))

11:45 AM - 12:00 PM

[B-6-04] Giant electrostatic modulation of transient characteristics in metal-to-insulator VO ₂ transition

^○Satoshi Hamasuna Hamasuna¹, Satya Prakash Pati¹, Takeaki Yajima¹ (1. Kyushu Univ. (Japan))

12:00 PM - 12:15 PM

[B-6-05] Novel WN _x/C Interfacial Layer on Hf _0.5Zr _0.5O ₂ Ferroelectric Memory

^○Abhijit Aich¹, Asim Senapati¹, Zhao- Feng Lou², Fu- Sheng Chang², Yu- Rui Chen², Yi- Pin Chen^1,3, Shih- Yin Huang^3,4, Siddheswar Maikap^1,3, Chee- Wee Liu², Min- Hung Lee² (1. Chang Gung Univ. (Taiwan), 2. National Taiwan Univ. (Taiwan), 3. Keelung Chang Gung Memorial Hospital (Taiwan), 4. Chang Gung University College of Medicine (Taiwan))

Session information

[B-6] Neuromorphic devices and materials

[B-6-01 (Invited)] Hardware Implementation of Probabilistic Models through Nanodevice Variability

[B-6-02] Deep Physical Reservoir Computing Achieved by Electric Double Layer Ion-Gating Reservoir

[B-6-03] Scaling of Device Area for Ultra-low-power Dissipation in 2-terminal Protonic Artificial Synapses

[B-6-04] Giant electrostatic modulation of transient characteristics in metal-to-insulator VO ₂ transition

[B-6-05] Novel WN _x/C Interfacial Layer on Hf _0.5Zr _0.5O ₂ Ferroelectric Memory

Authentication

Session information

[B-6] Neuromorphic devices and materials

[B-6-01 (Invited)] Hardware Implementation of Probabilistic Models through Nanodevice Variability

[B-6-02] Deep Physical Reservoir Computing Achieved by Electric Double Layer Ion-Gating Reservoir

[B-6-03] Scaling of Device Area for Ultra-low-power Dissipation in 2-terminal Protonic Artificial Synapses

[B-6-04] Giant electrostatic modulation of transient characteristics in metal-to-insulator VO 2 transition

[B-6-05] Novel WN x/C Interfacial Layer on Hf 0.5Zr 0.5O 2 Ferroelectric Memory

Authentication

[B-6-04] Giant electrostatic modulation of transient characteristics in metal-to-insulator VO ₂ transition

[B-6-05] Novel WN _x/C Interfacial Layer on Hf _0.5Zr _0.5O ₂ Ferroelectric Memory