[E-4] 3D NAND

Thu. Sep 7, 2023 10:45 AM - 12:00 PM Room E (223, Bldg. 2)

Session Chairs: Keiji Hosotani (KIOXIA), Ming-Hsiu Lee (Macronix International Co., Ltd)

+Add all to schedule

10:45 AM - 11:15 AM

[E-4-01 (Invited)] Polysilicon channel in 3-D NAND: Challenges and Strategies for Improvement

^○Sivaramakrishnan Ramesh¹ (1. imec (Belgium))

11:15 AM - 11:30 AM

[E-4-02] Compact Thermally Stable High Voltage FinFET with 40nm Tox and Lateral Break-Down>35V for 3D NAND Flash Periphery Application

^○Alessio Spessot¹, Philippe Matagne¹, Hiroaki Arimura¹, Jishnu Ganguly¹, Romain Ritzenthaler¹, Joao Bastos¹, Ritam Sarkar¹, Elena Capogreco¹, Yangyin Chen^1,2, Naoto Horiguchi¹ (1. imec (Belgium), 2. Western Digital (Belgium))

11:30 AM - 11:45 AM

[E-4-03] The Effect of Crystallinity of Channel Silicon Formed by Two Different Metal Induced Lateral Crystallization (MILC) on Cell Current Distribution in 3D Flash Memory

^○Haruki Matsuo¹, Hiroki Yamashita¹, Yusuke Shimada¹, Noritaka Ishihara¹, Satoshi Seto¹, Sho Morita¹, Masafumi Ukishima¹, Kazuya Uejima¹, Yusuke Arayashiki¹, Suzuka Kajiwara¹, Akiyuki Murayama¹, Katsuya Nishiyama¹, Kikuko Suhimae¹, Shinji Mori¹, Yuta Saito¹, Takeshi Shundo¹, Yurika Kanno¹, Hiroyuki Kamiya², Yasuhiro Uchiyama¹, Fumiki Aisou¹, Katsuyuki Sekine¹, Norio Ohtani¹ (1. Kioxia Corp. (Japan), 2. Western Digital Corp. (United States of America))

11:45 AM - 12:00 PM

[E-4-04] Optimization of Cell to Cell Space Material on 3D NAND Flash Memory

^○Daewoong Kang¹, Inyoung Lee², Yunjae Oh², Yunjae Suh³, Il Hwan Cho² (1. Seoul National University (Korea), 2. Myongji Univ. (Korea), 3. Soongsil Univ. (Korea))

Session information