[E-4] 3D NAND

2023年9月7日(木) 10:45 〜 12:00 Room E (223, Bldg. 2)

Session Chairs: Keiji Hosotani (KIOXIA), Ming-Hsiu Lee (Macronix International Co., Ltd)

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10:45 〜 11:15

[E-4-01 (Invited)] Polysilicon channel in 3-D NAND: Challenges and Strategies for Improvement

^○Sivaramakrishnan Ramesh¹ (1. imec (Belgium))

11:15 〜 11:30

[E-4-02] Compact Thermally Stable High Voltage FinFET with 40nm Tox and Lateral Break-Down>35V for 3D NAND Flash Periphery Application

^○Alessio Spessot¹, Philippe Matagne¹, Hiroaki Arimura¹, Jishnu Ganguly¹, Romain Ritzenthaler¹, Joao Bastos¹, Ritam Sarkar¹, Elena Capogreco¹, Yangyin Chen^1,2, Naoto Horiguchi¹ (1. imec (Belgium), 2. Western Digital (Belgium))

11:30 〜 11:45

[E-4-03] The Effect of Crystallinity of Channel Silicon Formed by Two Different Metal Induced Lateral Crystallization (MILC) on Cell Current Distribution in 3D Flash Memory

^○Haruki Matsuo¹, Hiroki Yamashita¹, Yusuke Shimada¹, Noritaka Ishihara¹, Satoshi Seto¹, Sho Morita¹, Masafumi Ukishima¹, Kazuya Uejima¹, Yusuke Arayashiki¹, Suzuka Kajiwara¹, Akiyuki Murayama¹, Katsuya Nishiyama¹, Kikuko Suhimae¹, Shinji Mori¹, Yuta Saito¹, Takeshi Shundo¹, Yurika Kanno¹, Hiroyuki Kamiya², Yasuhiro Uchiyama¹, Fumiki Aisou¹, Katsuyuki Sekine¹, Norio Ohtani¹ (1. Kioxia Corp. (Japan), 2. Western Digital Corp. (United States of America))

11:45 〜 12:00

[E-4-04] Optimization of Cell to Cell Space Material on 3D NAND Flash Memory

^○Daewoong Kang¹, Inyoung Lee², Yunjae Oh², Yunjae Suh³, Il Hwan Cho² (1. Seoul National University (Korea), 2. Myongji Univ. (Korea), 3. Soongsil Univ. (Korea))

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