^○Tsai- Jung Lin¹, Yi-Ju Yao¹, Ting-Yu Tseng², Ching-Ru Yang², Heng-Jia Chang², Guang-Li Luo³, Fu-Ju Hou³, Yung-Chun Wu² (1. College of Semiconductor Research, National Tsing Hua University (Taiwan), 2. Department of Engineering and System Science, National Tsing Hua University (Taiwan), 3. Taiwan Semiconductor Research Institute (Taiwan))

^○Haoji Qian¹, Rongzong Shen¹, Jiajia Chen¹, Gaobo Lin¹, Minglei Ma², Jiacheng Xu¹, Chengji Jin¹, Yan Liu², Xiao Yu¹, Genquan Han² (1. Zhejiang Lab. (China), 2. Xidian University (China))

^○Min Liao¹, Junshuai Chai¹, Jinjuan Xiang², Kai Han³, Yanrong Wang⁴, Hao Xu¹, Xiaolei Wang¹, Jing Zhang⁴, Wenwu Wang¹ (1. Institute of Microelectronics Chinese Academy of Sciences (China), 2. Beijing Superstring Academy of Memory Tech. (China), 3. Weifang Univ. (China), 4. North China Univ.of Tech. (China))

^○Mingshuang Kang¹, Yue Peng¹, Wenwu Xiao², Yan Liu¹, Genquan Han^1,3, Yue Hao¹ (1. Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University (China), 2. Xi'an UniIC Semiconductors Company Ltd. (China), 3. Hangzhou Institute of Technology, Xidian University, Hangzhou (China))