Chien-Te Tu¹, Wan-Hsuan Hsieh¹, Yi-Chun Liu¹, Yu-Rui Chen¹, Bo-Wei Huang¹, Chun-Yi Cheng¹, ^○Chee Wee Liu¹ (1. National Taiwan Univ. (Taiwan))

Curtis S Durfee¹, Ivo Otto², ^○Subhadeep Kal², Shanti Pancharatnam¹, Matthew Flaugh², Toshiki Kanaki², Matthew Rednor², Huimei Zhou¹, Liqiao Qin¹, Juntao Li¹, Luciana Meli¹, Nicolas Loubet¹, Peter Biolsi², Nelson Felix¹ (1. IBM (United States of America), 2. TEL (United States of America))

^○Yi- Ju Yao¹, Ting-Yu Tseng², Ching-Ru Yang², Tsai-Jung Lin¹, Heng-Jia Chang², Guang-Li Luo³, Fu-Ju Hou³, Yung-Chun Wu² (1. College of Semiconductor Research, National Tsing Hua University (Taiwan), 2. Department of Engineering and System Science, National Tsing Hua University (Taiwan), 3. Taiwan Semiconductor Research Institute (Taiwan))

^○Yutong Fan^1,2, Weihang Zhang^1,2, Xi Liu¹, Yu Wen¹, Zhihong Liu^1,2, Shenglei Zhao¹, Jincheng Zhang^1,2, Yue Hao^1,2 (1. Lab. of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Univ. of Xidian (China), 2. Guangzhou wide bandgap semiconductor innovation center, inst. of Guangzhou technology, Univ. of Xidian (China))

^○Sekhar Reddy Kola¹, Yiming Li¹ (1. National Yang Ming Chiao Tung University (Taiwan))

^○Sanguk Lee¹, Jinsu Jeong¹, Seunghwan Lee¹, Junjong Lee¹, Jaewan Lim¹, Yonghwan Ahn¹, Rockhyun Baek¹ (1. Univ. of POSTECH (Korea))