[H-5] Ferroelectric Memory Materials

Fri. Sep 8, 2023 9:00 AM - 10:15 AM Room H (232, Bldg. 2)

Session Chairs: Grenouillet Laurent (CEA-Leti), Halid Mulaosmanovic (GlobalFoundries., Germany)

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9:00 AM - 9:15 AM

[H-5-01] Understanding of Polarization Reversal and Charge Trapping under Imprint in HfO ₂-FeFET by Charge Component Analysis

^○Yoko Yoshimura¹, Kunifumi Suzuki¹, Reika Ichihara¹, Kiwamu Sakuma¹, Kota Takahashi¹, Kazuhiro Matsuo¹, Makoto Fujiwara¹, Masumi Saitoh¹ (1. Kioxia Corp. (Japan))

9:15 AM - 9:30 AM

[H-5-02] Ferroelectric Properties Tuning in Hf _0.5Zr _0.5O ₂ Thin Films via Controlling the Crystal Orientations of Single-crystalline TiN Substrates

^○Yuyan Fan^1,2, Shunda Zhang³, Yulong Dong^1,2, Danyang Chen^1,2, Jiahui Zhang^3,4, Jingquan Liu¹, Mengwei Si¹, Yanwei Cao³, Xiuyan Li¹ (1. National Key Lab. of Sci. and Tech. on Micro/Nano Fabrication (China), 2. Department of Micro/Nano Electronics, Shanghai Jiao Tong Univ. (China), 3. Ningbo Inst. of Materials Tech. and Eng., Chinese Academy of Sci. (China), 4. Faculty of Electrical Eng. and Computer Sci., Ningbo Univ. (China))

9:30 AM - 9:45 AM

[H-5-03] Switching Characteristics and Endurance Analysis of Nanolaminated Ferroelectric HZO Gate Stack with Al ₂O ₃ for Back-End-of-Line Applications

^○Cheng-Hung Wu¹, Chun-Jung Su², Vita Pi-Ho Hu¹ (1. National Taiwan Univ. (Taiwan), 2. National Yang Ming Chiao Tung Univ. (Taiwan))

9:45 AM - 10:00 AM

[H-5-04] Laminate-Thickness-Dependent Switching Dynamics of HfO ₂-ZrO ₂ Ferroelectric Nanolaminate Capacitors

^○Xiaoyu Ke^1,2, Junshuai Chai^1,2, Hao Xu^1,2, Xiaolei Wang^1,2, Wenwu Wang^1,2 (1. Key Lab. of Microelectronics Devices and Integrated Tech., Inst. of Microelectronics, Chinese Academy of Sci. (China), 2. College of Integrated Circuits, Univ. of Chinese Academy of Sci. (China))

10:00 AM - 10:15 AM

[H-5-05] Performance Improvement of HfZrO _x Ferroelectric Tunnel Junction with Amorphous Al ₂O ₃ Passivation Layer

^○Yueyuan - Zhang¹, Yue - Peng¹, Fenning - Liu¹, Yan - Liu¹, Yue - Hao¹, Genquan - Han¹ (1. Xidian Univ. (China))

Session information

[H-5] Ferroelectric Memory Materials

[H-5-01] Understanding of Polarization Reversal and Charge Trapping under Imprint in HfO ₂-FeFET by Charge Component Analysis

[H-5-02] Ferroelectric Properties Tuning in Hf _0.5Zr _0.5O ₂ Thin Films via Controlling the Crystal Orientations of Single-crystalline TiN Substrates

[H-5-03] Switching Characteristics and Endurance Analysis of Nanolaminated Ferroelectric HZO Gate Stack with Al ₂O ₃ for Back-End-of-Line Applications

[H-5-04] Laminate-Thickness-Dependent Switching Dynamics of HfO ₂-ZrO ₂ Ferroelectric Nanolaminate Capacitors

[H-5-05] Performance Improvement of HfZrO _x Ferroelectric Tunnel Junction with Amorphous Al ₂O ₃ Passivation Layer

Authentication

Session information

[H-5] Ferroelectric Memory Materials

[H-5-01] Understanding of Polarization Reversal and Charge Trapping under Imprint in HfO 2-FeFET by Charge Component Analysis

[H-5-02] Ferroelectric Properties Tuning in Hf 0.5Zr 0.5O 2 Thin Films via Controlling the Crystal Orientations of Single-crystalline TiN Substrates

[H-5-03] Switching Characteristics and Endurance Analysis of Nanolaminated Ferroelectric HZO Gate Stack with Al 2O 3 for Back-End-of-Line Applications

[H-5-04] Laminate-Thickness-Dependent Switching Dynamics of HfO 2-ZrO 2 Ferroelectric Nanolaminate Capacitors

[H-5-05] Performance Improvement of HfZrO x Ferroelectric Tunnel Junction with Amorphous Al 2O 3 Passivation Layer

Authentication

[H-5-01] Understanding of Polarization Reversal and Charge Trapping under Imprint in HfO ₂-FeFET by Charge Component Analysis

[H-5-02] Ferroelectric Properties Tuning in Hf _0.5Zr _0.5O ₂ Thin Films via Controlling the Crystal Orientations of Single-crystalline TiN Substrates

[H-5-03] Switching Characteristics and Endurance Analysis of Nanolaminated Ferroelectric HZO Gate Stack with Al ₂O ₃ for Back-End-of-Line Applications

[H-5-04] Laminate-Thickness-Dependent Switching Dynamics of HfO ₂-ZrO ₂ Ferroelectric Nanolaminate Capacitors

[H-5-05] Performance Improvement of HfZrO _x Ferroelectric Tunnel Junction with Amorphous Al ₂O ₃ Passivation Layer