[K-1] Ferroelectric Devices

Wed. Sep 6, 2023 2:00 PM - 3:30 PM Room K (234, Bldg. 2)

Session Chairs: Halid Mulaosmanovic (GlobalFoundries., Germany), E Ray Hsieh (National Central Univ.)

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2:00 PM - 2:30 PM

[K-1-01 (Invited)] A Deep Look into the Endurance Degradation in Silicon Ferroelectric FET

^○Kai Ni¹ (1. Univ. of Notre Dame (United States of America))

2:30 PM - 2:45 PM

[K-1-02] Understanding Memory Window of FeFETs under Coexistence of Charge Trapping and Ferroelectric Polarization: Violation of Linear Superposition

^○Kasidit Toprasertpong^1,2, Mitsuru Takenaka¹, Shinichi Takagi¹ (1. Univ. of Tokyo (Japan), 2. Stanford U. (United States of America))

2:45 PM - 3:00 PM

[K-1-03] Recovery of Cycling-Induced Degradation of Interfacial SiO ₂ in HfO ₂-FeFET and its Impact on Retention Characteristics

^○Viktoria Schlykow¹, Kunifumi Suzuki¹, Yoko Yoshimura¹, Takamasa Hamai¹, Kiwamu Sakuma¹, Kazuhiro Matsuo¹, Kota Takahashi¹, Masamichi Suzuki¹, Masumi Saitoh¹, Reika Ichihara¹ (1. KIOXIA Corporation (Japan))

3:00 PM - 3:15 PM

[K-1-04] 3D Vertical Poly-Si FeFETs Toward Stackable High-Density Non-volatile Memory Applications

^○Zhao- Feng Lou¹, Zhi-Xian Li², Fu-Sheng Chang³, Chen-Ying Lin², Jia-Hong Chen², Zong-Han Li², Cheng-Hong Liu¹, Tim Chen⁴, Min-Hung Lee¹ (1. Graduate School of Advance Tech., National Taiwan Univ. (Taiwan), 2. Inst. and Undergraduate Program of Electro-Optical Eng., National Taiwan Normal Univ. (Taiwan), 3. Graduate Inst. of Electronics Eng., National Taiwan Univ. (Taiwan), 4. AUCMOS Tech. (United States of America))

Cancelled

3:15 PM - 3:30 PM

Session information

[K-1] Ferroelectric Devices

[K-1-01 (Invited)] A Deep Look into the Endurance Degradation in Silicon Ferroelectric FET

[K-1-02] Understanding Memory Window of FeFETs under Coexistence of Charge Trapping and Ferroelectric Polarization: Violation of Linear Superposition

[K-1-03] Recovery of Cycling-Induced Degradation of Interfacial SiO ₂ in HfO ₂-FeFET and its Impact on Retention Characteristics

[K-1-04] 3D Vertical Poly-Si FeFETs Toward Stackable High-Density Non-volatile Memory Applications

[K-1-05] Withdrawn

Authentication

Session information

[K-1] Ferroelectric Devices

[K-1-01 (Invited)] A Deep Look into the Endurance Degradation in Silicon Ferroelectric FET

[K-1-02] Understanding Memory Window of FeFETs under Coexistence of Charge Trapping and Ferroelectric Polarization: Violation of Linear Superposition

[K-1-03] Recovery of Cycling-Induced Degradation of Interfacial SiO 2 in HfO 2-FeFET and its Impact on Retention Characteristics

[K-1-04] 3D Vertical Poly-Si FeFETs Toward Stackable High-Density Non-volatile Memory Applications

[K-1-05] Withdrawn

Authentication

[K-1-03] Recovery of Cycling-Induced Degradation of Interfacial SiO ₂ in HfO ₂-FeFET and its Impact on Retention Characteristics