^○Kai-Shin Li¹ (1. Taiwan Semiconductor Research Institute (Taiwan))

^○Yuya Miyazaki¹, Chihiro Watanabe¹, Junichi Tsuchimoto², Hiroyuki Hosoya³, Yoshiteru Amemiya², Akinobu Teramoto^1,2 (1. Grad. Sch. of Adv. Sci. and Eng., Hiroshima Univ. (Japan), 2. Res. Inst. of Nanodevices, Hiroshima Univ. (Japan), 3. CANON ANELVA Corp. (Japan))

YU-CHENG - LIN¹, Yao-Hung Huang¹, ^○Kai-Ching Chuang¹, Yu-Der Chih², Jonathan Chang², Chrong-Jung Lin¹, Ya-Chin King¹ (1. Institute of Electronics Engineering, National Tsing Hua University (Taiwan), 2. Design Technology Platform (DTP), Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan (Taiwan))

^○Laurent Grenouillet¹, Simon Martin¹, Julie Laguerre¹, Justine Barbot¹, Nicolas Vaxelaire¹, Pierre-Marie Deleuze¹, Olivier Renault¹, Rabah Kies¹, Catherine Carabasse¹, Pattamon Dezest¹, Francois Aussenac¹, Richard Souil¹, Olivier Billoint¹, Elisa Vianello¹, Wassim Hamouda², Nick Barrett², Fracois Andrieu¹, Jean Coignus¹ (1. CEA-Leti (France), 2. SPEC-CEA (France))

^○Lucas Reganaz^1,2, Carine Jahan¹, Damien Deleruyelle³, Quentin Rafhay², Djohan Bonnet¹, Niccolo Castellani¹, Elisa Vianello¹, Alessandro Bricalli⁴, Giuseppe Piccolboni⁴, Gabriel Molas⁴, Francois Andrieu¹ (1. CEA Leti (France), 2. Université Grenoble Alpes, Université Savoie Mont Blanc, CNRS, Grenoble INP, IMEP LAHC, 3. 000, Grenoble (France), 3. INL CNRS, INSA Lyon (France), 4. Weebit Nano Ltd (Israel))