[M-1] Wide Bandgap Materials

2023年9月6日(水) 14:00 〜 15:30 Room M (431, Bldg. 4)

Session Chairs: Shingo Ogawa (Toray Research Center, Inc.), Takuya Hoshi (NTT Device Technology Lab.)

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14:00 〜 14:30

[M-1-01 (Invited)] Effect of Basal Plane Dislocation Structure on 1SSF Expansion Rate in 4H-SiC

^○Johji Nishio¹, Chiharu Ota¹, Ryosuke Iijima¹ (1. Corporate R&D Center, Toshiba Corp. (Japan))

14:30 〜 15:00

[M-1-02 (Invited)] DLTS studies of Deep Level Defects in GaN

^○Yutaka Tokuda¹ (1. Aichi Inst. of Tech. (Japan))

15:00 〜 15:15

[M-1-03] Theoretical Study of Nitrogen Incorporation at the Steps on SiC(0001) Surface during CVD Growth

^○Souichiro - Yamauchi¹, Ichiro - Mizushima², Takashi - Yoda^2,3, Atushi - Oshiyama⁴, Kenji - Shiraishi^4,1 (1. Graduate School of Engineering, Univ. of Nagoya (Japan), 2. NuFlare Technology Inc. (Japan), 3. FIRST of Tokyo Tech. (Japan), 4. IMaSS, Univ. of Nagoya (Japan))

15:15 〜 15:30

[M-1-04] Sputtered β-Ga ₂O ₃ Crystallization by High Temperature Annealing on AlN/Si

^○Akira Sagawa¹, Norikazu Ito¹, Taketoshi Tanaka¹, Ken Nakahara¹ (1. ROHM Corp., Ltd. (Japan))

セッション情報

[M-1] Wide Bandgap Materials

[M-1-01 (Invited)] Effect of Basal Plane Dislocation Structure on 1SSF Expansion Rate in 4H-SiC

[M-1-02 (Invited)] DLTS studies of Deep Level Defects in GaN

[M-1-03] Theoretical Study of Nitrogen Incorporation at the Steps on SiC(0001) Surface during CVD Growth

[M-1-04] Sputtered β-Ga ₂O ₃ Crystallization by High Temperature Annealing on AlN/Si

認証

セッション情報

[M-1] Wide Bandgap Materials

[M-1-01 (Invited)] Effect of Basal Plane Dislocation Structure on 1SSF Expansion Rate in 4H-SiC

[M-1-02 (Invited)] DLTS studies of Deep Level Defects in GaN

[M-1-03] Theoretical Study of Nitrogen Incorporation at the Steps on SiC(0001) Surface during CVD Growth

[M-1-04] Sputtered β-Ga 2O 3 Crystallization by High Temperature Annealing on AlN/Si

認証

[M-1-04] Sputtered β-Ga ₂O ₃ Crystallization by High Temperature Annealing on AlN/Si