[M-3] Group IV Materials I

Thu. Sep 7, 2023 9:00 AM - 10:30 AM Room M (431, Bldg. 4)

Session Chairs: Katsunori Makihara (Nagoya Univ.), Yosuke Shimura (imec)

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9:00 AM - 9:30 AM

[M-3-01 (Invited)] Si-Ge-Sn heterostructures grown by chemical vapor deposition for electronic and photonic devices

Omar Concepción¹, Yuji Yamamoto², Giovanni Capellini², Mustafa El-Kurdi³, Qing-Tai Zhao¹, Dan Buca¹, ^○Detlev Grützmacher¹ (1. Forschungszentrum Julich (Germany), 2. IHP - Leibniz Institut für innovative Mikroelektronik (Germany), 3. C2N -CNRS -Université Paris Saclay (France))

9:30 AM - 9:45 AM

[M-3-02] Influence of Strain on Multilayer Ge Nanodot Formation on SiGe Virtual Substrate

^○Wei-Chen Wen¹, Bernd Tillack^1,2, Yuji Yamamoto¹ (1. IHP - Leibniz-Institut für innovative Mikroelektronik (Germany), 2. Technische Universität Berlin (Germany))

9:45 AM - 10:00 AM

[M-3-03] "Self-Assembling Formation of Si-QDs on SiO ₂Line-Patterns"

^○Ryoya Tsuji¹, Yuki Imai¹, Baek Jongeun¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1. Nagoya Univ. (Japan))

10:00 AM - 10:15 AM

[M-3-04] Formation of One-Dimensionally Self-Aligned Si-QDs and Their Local Electron Charging Properties

^○Yuki Imai¹, Katsunori Makihara¹, Yuji Yamamoto², Wei-Chen Wen², Markus Andreas Schubert², Johgeun Baek¹, Ryoya Tsuji¹, Noriyuki Taoka³, Akio Ohta⁴, Seiichi Miyazaki¹ (1. Nagoya Univ. (Japan), 2. IHP (Germany), 3. Aichi Inst. of Tech. (Japan), 4. Fukuoka Univ. (Japan))

10:15 AM - 10:30 AM

[M-3-05 (Late News)] Optical Material Properties of Epitaxial SiGe/Si Multi-Layers Used for Complementary FET Devices

^○Roger Loo¹, Andriy Hikavyy¹, Dong Wang², Keisuke Yamamoto², Tamás Sipőcz3³, Árpád Kerekes³, Anjani Akula¹, Yosuke Shimura¹ (1. Imec (Belgium), 2. Kyushu Univ (Japan), 3. Semilab Semiconductor Physics Lab. Corp. (Hungary))

Session information

[M-3] Group IV Materials I

[M-3-01 (Invited)] Si-Ge-Sn heterostructures grown by chemical vapor deposition for electronic and photonic devices

[M-3-02] Influence of Strain on Multilayer Ge Nanodot Formation on SiGe Virtual Substrate

[M-3-03] "Self-Assembling Formation of Si-QDs on SiO ₂Line-Patterns"

[M-3-04] Formation of One-Dimensionally Self-Aligned Si-QDs and Their Local Electron Charging Properties

[M-3-05 (Late News)] Optical Material Properties of Epitaxial SiGe/Si Multi-Layers Used for Complementary FET Devices

Authentication

Session information

[M-3] Group IV Materials I

[M-3-01 (Invited)] Si-Ge-Sn heterostructures grown by chemical vapor deposition for electronic and photonic devices

[M-3-02] Influence of Strain on Multilayer Ge Nanodot Formation on SiGe Virtual Substrate

[M-3-03] "Self-Assembling Formation of Si-QDs on SiO 2 Line-Patterns"

[M-3-04] Formation of One-Dimensionally Self-Aligned Si-QDs and Their Local Electron Charging Properties

[M-3-05 (Late News)] Optical Material Properties of Epitaxial SiGe/Si Multi-Layers Used for Complementary FET Devices

Authentication

[M-3-03] "Self-Assembling Formation of Si-QDs on SiO ₂Line-Patterns"